Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: ACS Materials Letters
سال: 2019
ISSN: 2639-4979,2639-4979
DOI: 10.1021/acsmaterialslett.9b00357